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Renesas Electronics America RJK6018DPK-00#T0
MOSFET N-CH 600V 30A TO3P
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 235mOhm @ 15A, 10V
- Series
- -
- Power Dissipation (Max)
- 60W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-3PFM
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 92nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4100pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-3PFM, SC-93-3