Images are for reference only. See Product Specifications for product details
Renesas Electronics America RJL6013DPE-00#J3
MOSFET N-CH 600V 11A LDPAK
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 265mOhm @ 13.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 200W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-3P
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 98nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3830pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 27A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3