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Renesas Electronics America RQA0009TXDQS#H1
MOSFET N-CH UPAK
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Package / Case
- 3-DFN Exposed Pad
- Vgs(th) (Max) @ Id
- 750mV @ 1mA
- Operating Temperature
- 150°C
- Rds On (Max) @ Id, Vgs
- -
- Power Dissipation (Max)
- 15W (Tc)
- Series
- -
- Supplier Device Package
- 2-HWSON (5x4)
- FET Type
- N-Channel
- Drain to Source Voltage (Vdss)
- 16V
- Vgs (Max)
- ±5V
- Current - Continuous Drain (Id) @ 25°C
- 3.8A (Ta)
- Technology
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On)
- -
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Surface Mount