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Renesas Electronics America UPA1912TE(0)-T1-AT
MOSFET P-CH SC-95
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Rds On (Max) @ Id, Vgs
- 1Ohm @ 3.3A, 10V
- Power Dissipation (Max)
- 89W (Tc)
- Series
- CoolMOS™
- Supplier Device Package
- PG-TO220-3-1
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 900V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 850pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5.7A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 3.5V @ 370µA
- Operating Temperature
- -55°C ~ 150°C (TJ)