Renesas Electronics America UPA2820T1S-E2-AT

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2A, 10V

Series

-

Power Dissipation (Max)

38W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-251 (IPAK)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V