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ROHM Semiconductor RFN30TS6SGC11

DIODE GEN PURP 600V 30A TO247

Manufacturer
ROHM Semiconductor
Datasheet
Price
3.45
Stock
77
Description
DIODE GEN PURP 600V 30A TO247

Product Details

Voltage - DC Reverse (Vr) (Max)
650V
Current - Average Rectified (Io)
8A (DC)
Speed
No Recovery Time > 500mA (Io)
Operating Temperature - Junction
175°C (Max)
Series
-
Voltage - Forward (Vf) (Max) @ If
1.5V @ 8A
Packaging
Tube
Diode Type
Silicon Carbide Schottky
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-2
Capacitance @ Vr, F
400pF @ 1V, 1MHz
Reverse Recovery Time (trr)
0ns
Current - Reverse Leakage @ Vr
40µA @ 650V