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ROHM Semiconductor RUM002N05T2L
MOSFET N-CH 50V 0.2A 3VMT
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 29970
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 200mW (Ta)
- Packaging
- Cut Tape (CT)
- Supplier Device Package
- SOT-23 (TO-236AB)
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 50pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 115mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Base Part Number
- 2N7002
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- -
- Rds On (Max) @ Id, Vgs
- 7.5Ohm @ 500mA, 10V