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ROHM Semiconductor RZM001P02T2L
MOSFET P-CH 20V 0.1A VMT3
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 78995
Product Details
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.9Ohm @ 100mA, 10V
- Series
- U-MOSVII-H
- Power Dissipation (Max)
- 320mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 0.35nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 17pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 200mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA