ROHM Semiconductor TT8M1TR

Product Details

FET Type

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs

-

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

30V

FET Feature

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds

13pF @ 5V

Part Status

Not For New Designs

Current - Continuous Drain (Id) @ 25°C

100mA

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Base Part Number

*K1

Vgs(th) (Max) @ Id

1.5V @ 100µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

8Ohm @ 10mA, 4V

Series

-

Supplier Device Package

EMT6