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ROHM Semiconductor US6J11TR
MOSFET 2P-CH 12V 1.3A TUMT6
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 851
Product Details
- Supplier Device Package
- X2-DFN1310-6 (Type B)
- Series
- Automotive, AEC-Q101
- Gate Charge (Qg) (Max) @ Vgs
- 0.9nC @ 4.5V
- FET Type
- N and P-Channel Complementary
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 65.9pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 1.1A, 700mA
- Part Status
- Active
- Power - Max
- 390mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 460mOhm @ 200mA, 4.5V