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ROHM Semiconductor US6K4TR
MOSFET 2N-CH 20V 1.5A TUMT6
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 590
Product Details
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 190pF @ 25V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 2.9A, 2.1A
- Part Status
- Active
- Power - Max
- 1.7W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1V @ 250µA (Min)
- Operating Temperature
- -
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 2.5A, 10V
- Supplier Device Package
- 8-MLP (3x3)
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 3.9nC @ 10V
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 30V