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STMicroelectronics SCTW90N65G2V
SILICON CARBIDE POWER MOSFET 650
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- SILICON CARBIDE POWER MOSFET 650
Product Details
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Power Dissipation (Max)
- -
- Series
- -
- Supplier Device Package
- D3Pak
- FET Type
- N-Channel
- Drain to Source Voltage (Vdss)
- 1.2kV
- Vgs (Max)
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On)
- -
- FET Feature
- -