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Taiwan Semiconductor Corporation ES1J R3G
DIODE GEN PURP 600V 1A DO214AC
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 10383
Product Details
- Package / Case
- DO-214AC, SMA
- Base Part Number
- BYS12-90
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-214AC (SMA)
- Current - Reverse Leakage @ Vr
- 100µA @ 90V
- Voltage - DC Reverse (Vr) (Max)
- 90V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1.5A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 750mV @ 1A
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount