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Taiwan Semiconductor Corporation ES3D R7G
DIODE GEN PURP 200V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 5070
- Description
- DIODE GEN PURP 200V 3A DO214AB
Product Details
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 920mV @ 1.2A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- Axial
- Capacitance @ Vr, F
- -
- Supplier Device Package
- Axial
- Reverse Recovery Time (trr)
- 18µs
- Current - Reverse Leakage @ Vr
- 10µA @ 800V
- Voltage - DC Reverse (Vr) (Max)
- 800V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1.2A
- Series
- -
- Operating Temperature - Junction
- -40°C ~ 150°C