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Taiwan Semiconductor Corporation ES3D V7G
DIODE GEN PURP 200V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 3161
- Description
- DIODE GEN PURP 200V 3A DO214AB
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- SMBflat
- Reverse Recovery Time (trr)
- 60ns
- Current - Reverse Leakage @ Vr
- 1µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- -40°C ~ 175°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.4V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-221AA, SMB Flat Leads