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Taiwan Semiconductor Corporation HS1J R3G
DIODE GEN PURP 600V 1A DO214AC
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.49
- Stock
- 3600
Product Details
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AA, SMB
- Capacitance @ Vr, F
- 18pF @ 0V, 1MHz
- Supplier Device Package
- DO-214AA (SMB)
- Reverse Recovery Time (trr)
- 1.5µs
- Current - Reverse Leakage @ Vr
- 10µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 3A
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.15V @ 3A