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Taiwan Semiconductor Corporation HS3FB R5G
DIODE GEN PURP 300V 3A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 1700
- Description
- DIODE GEN PURP 300V 3A DO214AA
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DPAK
- Reverse Recovery Time (trr)
- 35ns
- Current - Reverse Leakage @ Vr
- 5µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- -
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.7V @ 5A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63