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Taiwan Semiconductor Corporation HS3JB R5G
DIODE GEN PURP 600V 3A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 3019
- Description
- DIODE GEN PURP 600V 3A DO214AA
Product Details
- Mounting Type
- Through Hole
- Package / Case
- DO-201AD, Axial
- Capacitance @ Vr, F
- 25pF @ 4V, 1MHz
- Supplier Device Package
- DO-201AD
- Current - Reverse Leakage @ Vr
- 5µA @ 1000V
- Voltage - DC Reverse (Vr) (Max)
- 1000V
- Current - Average Rectified (Io)
- 3A
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 3A
- Packaging
- Cut Tape (CT)
- Diode Type
- Standard
- Part Status
- Active