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Taiwan Semiconductor Corporation MUR360S V7G
DIODE GEN PURP 600V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 2136
- Description
- DIODE GEN PURP 600V 3A DO214AB
Product Details
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Current - Average Rectified (Io)
- 1.8A (DC)
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -40°C ~ 150°C
- Series
- TMBS®
- Voltage - Forward (Vf) (Max) @ If
- 1.9V @ 4A
- Packaging
- Cut Tape (CT)
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AA, SMB
- Capacitance @ Vr, F
- 120pF @ 4V, 1MHz
- Supplier Device Package
- DO-214AA (SMB)
- Current - Reverse Leakage @ Vr
- 150µA @ 200V