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Taiwan Semiconductor Corporation RS1DL RVG
DIODE GEN PURP 200V 800MA SUBSMA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.39
- Stock
- 21000
Product Details
- Package / Case
- DO-219AB
- Capacitance @ Vr, F
- 10pF @ 4V, 1MHz
- Supplier Device Package
- Sub SMA
- Reverse Recovery Time (trr)
- 150ns
- Current - Reverse Leakage @ Vr
- 5µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 800mA
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 800mA
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount