Images are for reference only. See Product Specifications for product details
Taiwan Semiconductor Corporation RS3J R7G
DIODE GEN PURP 600V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 4250
- Description
- DIODE GEN PURP 600V 3A DO214AB
Product Details
- Diode Type
- Schottky
- Voltage - Forward (Vf) (Max) @ If
- 800mV @ 100mA
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerDI™ 323
- Base Part Number
- PD3S0230
- Capacitance @ Vr, F
- 10.7pF @ 1V, 1MHz
- Supplier Device Package
- PowerDI™ 323
- Reverse Recovery Time (trr)
- 5ns
- Current - Reverse Leakage @ Vr
- 2µA @ 25V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Voltage - DC Reverse (Vr) (Max)
- 30V
- Series
- -
- Current - Average Rectified (Io)
- 200mA (DC)
- Packaging
- Digi-Reel®
- Operating Temperature - Junction
- -65°C ~ 125°C