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Taiwan Semiconductor Corporation RSFJL R3G

DIODE GEN PURP 600V 500MA SUBSMA

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
0
Stock
3338
Description
DIODE GEN PURP 600V 500MA SUBSMA

Product Details

Series
-
Operating Temperature - Junction
-55°C ~ 150°C
Packaging
Digi-Reel®
Voltage - Forward (Vf) (Max) @ If
1.15V @ 2A
Diode Type
Standard
Part Status
Active
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Capacitance @ Vr, F
12pF @ 4V, 1MHz
Supplier Device Package
DO-214AA (SMB)
Reverse Recovery Time (trr)
2.1µs
Current - Reverse Leakage @ Vr
5µA @ 200V
Voltage - DC Reverse (Vr) (Max)
200V
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io)
1.6A