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Taiwan Semiconductor Corporation S3JBHR5G
DIODE GEN PURP 600V 3A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 4957
- Description
- DIODE GEN PURP 600V 3A DO214AA
Product Details
- Current - Reverse Leakage @ Vr
- 500nA @ 25V
- Voltage - DC Reverse (Vr) (Max)
- 40V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Current - Average Rectified (Io)
- 200mA
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 750mV @ 100mA
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SC-89, SOT-490
- Capacitance @ Vr, F
- 10pF @ 1V, 1MHz
- Supplier Device Package
- SOT-523
- Reverse Recovery Time (trr)
- 5ns