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Taiwan Semiconductor Corporation S8GC R7G
DIODE GEN PURP 400V 8A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.5
- Stock
- 4250
Product Details
- Reverse Recovery Time (trr)
- 2.5µs
- Current - Reverse Leakage @ Vr
- 10µA @ 600V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Series
- eSMP®
- Current - Average Rectified (Io)
- 4A
- Packaging
- Digi-Reel®
- Operating Temperature - Junction
- -55°C ~ 150°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 4A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Base Part Number
- S4PJ
- Capacitance @ Vr, F
- 30pF @ 4V, 1MHz
- Supplier Device Package
- TO-277A (SMPC)