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Taiwan Semiconductor Corporation TPMR10J S1G
DIODE GEN PURP 600V 10A TO277A
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 6250
- Description
- DIODE GEN PURP 600V 10A TO277A
Product Details
- Voltage - DC Reverse (Vr) (Max)
- 120V
- Current - Average Rectified (Io)
- 12A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 780mV @ 12A
- Packaging
- Digi-Reel®
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-277A (SMPC)
- Current - Reverse Leakage @ Vr
- 500µA @ 120V