Images are for reference only. See Product Specifications for product details
Taiwan Semiconductor Corporation TPUH6J S1G
DIODE GEN PURP 600V 6A TO277A
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 7353
- Description
- DIODE GEN PURP 600V 6A TO277A
Product Details
- Reverse Recovery Time (trr)
- 75ns
- Current - Reverse Leakage @ Vr
- 10µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 3A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.88V @ 3A
- Diode Type
- Avalanche
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Capacitance @ Vr, F
- 60pF @ 4V, 1MHz
- Supplier Device Package
- TO-277A (SMPC)