Taiwan Semiconductor Corporation TSM950N10CW RPG

Product Details

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

110mOhm @ 4.5A, 10V

Series

Automotive, AEC-Q101

Power Dissipation (Max)

1.97W (Ta)

FET Type

P-Channel

Supplier Device Package

U-DFN2020-6 (Type F)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

17.2nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

969pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V