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Taiwan Semiconductor Corporation US1K R3G
DIODE GEN PURP 800V 1A DO214AC
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 3008
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- DO-219AB
- Capacitance @ Vr, F
- -
- Supplier Device Package
- Sub SMA
- Current - Reverse Leakage @ Vr
- 50µA @ 150V
- Voltage - DC Reverse (Vr) (Max)
- 150V
- Current - Average Rectified (Io)
- 1A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 900mV @ 1A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Schottky
- Part Status
- Active