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Toshiba Memory America, Inc. TH58NYG2S3HBAI4

4GB SLC NAND 24NM BGA 9X11 1.8V

Manufacturer
Toshiba Memory America, Inc.
Datasheet
Price
6.5
Stock
210

Product Details

Access Time
5ns
Write Cycle Time - Word, Page
15ns
Memory Size
1Gb (64M x 16)
Memory Type
Volatile
Part Status
Active
Memory Format
DRAM
Mounting Type
Surface Mount
Package / Case
60-VFBGA
Clock Frequency
200MHz
Memory Interface
Parallel
Series
-
Voltage - Supply
1.7V ~ 1.95V
Packaging
Tray
Operating Temperature
-40°C ~ 85°C (TA)
Technology
SDRAM - Mobile LPDDR
Supplier Device Package
60-FBGA (8x9)