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Toshiba Memory TH58BVG2S3HBAI6

NAND Flash 4Gb 24nm SLC NAND (EEPROM)

Manufacturer
Toshiba Memory
Datasheet
Price
0.2
Stock
10000
Description
NAND Flash 4Gb 24nm SLC NAND (EEPROM)

Product Details

Memory Size
72 Mbit
Supply Voltage - Max
1.9 V
Memory Type
DDR-II
Supply Voltage - Min
1.7 V
Subcategory
Memory & Data Storage
Factory Pack Quantity
15
Manufacturer
GSI Technology
Maximum Clock Frequency
333 MHz
Organization
2 M x 36
Maximum Operating Temperature
+ 85 C
Product Type
SRAM
Minimum Operating Temperature
- 40 C
RoHS
Details
Interface Type
Parallel
Type
SigmaDDR-II B4
Mounting Style
SMD/SMT
Brand
GSI Technology
Package / Case
BGA-165
Series
GS8662R36BGD
Product Category
SRAM
Packaging
Tray
Moisture Sensitive
Yes
Tradename
SigmaDDR-II
Supply Current - Max
695 mA