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Toshiba Memory TH58NYG2S3HBAI6
NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
- Manufacturer
- Toshiba Memory
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Product Details
- RoHS
- Details
- Product Type
- SRAM
- Minimum Operating Temperature
- 0 C
- Type
- SCD/DCD
- Interface Type
- Parallel
- Brand
- GSI Technology
- Mounting Style
- SMD/SMT
- Series
- GS88236CGB
- Package / Case
- BGA-119
- Packaging
- Tray
- Product Category
- SRAM
- Tradename
- SyncBurst
- Moisture Sensitive
- Yes
- Access Time
- 5.5 ns
- Supply Current - Max
- 140 mA, 180 mA
- Memory Size
- 9 Mbit
- Supply Voltage - Max
- 2.7 V
- Memory Type
- SDR
- Supply Voltage - Min
- 1.7 V
- Subcategory
- Memory & Data Storage
- Factory Pack Quantity
- 42
- Manufacturer
- GSI Technology
- Maximum Clock Frequency
- 250 MHz
- Organization
- 256 k x 36
- Maximum Operating Temperature
- + 70 C