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Toshiba Semiconductor and Storage 1SS250(TE85L,F)
DIODE GEN PURP 200V 100MA SC59
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 200V 100MA SC59
Product Details
- Current - Reverse Leakage @ Vr
- 5µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.7V @ 500mA
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SOD-123F
- Capacitance @ Vr, F
- 5pF @ 4V, 1MHz
- Supplier Device Package
- SOD-123F
- Reverse Recovery Time (trr)
- 80ns