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Toshiba Semiconductor and Storage 1SS307E,L3F
DIODE GEN PURP 80V 100MA SC79
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 100
Product Details
- Supplier Device Package
- SOD-80 QuadroMELF
- Reverse Recovery Time (trr)
- 8ns
- Current - Reverse Leakage @ Vr
- 25nA @ 20V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Voltage - DC Reverse (Vr) (Max)
- 75V
- Series
- Automotive, AEC-Q101
- Current - Average Rectified (Io)
- 150mA
- Packaging
- Cut Tape (CT)
- Operating Temperature - Junction
- 175°C (Max)
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 100mA
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SOD-80 Variant
- Base Part Number
- LS4448
- Capacitance @ Vr, F
- 4pF @ 0V, 1MHz