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Toshiba Semiconductor and Storage 1SS370TE85LF
DIODE GEN PURP 200V 100MA SC70
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 200V 100MA SC70
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 150°C
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 750mV @ 7.5A
- Packaging
- Tube
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-263AB
- Current - Reverse Leakage @ Vr
- 500µA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Current - Average Rectified (Io)
- 7.5A