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Toshiba Semiconductor and Storage 1SS387,L3F
DIODE GEN PURP 80V 100MA ESC
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 17910
Product Details
- Supplier Device Package
- DO-41
- Current - Reverse Leakage @ Vr
- 10µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 175°C
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-204AL, DO-41, Axial
- Base Part Number
- 1N4005
- Capacitance @ Vr, F
- -