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Toshiba Semiconductor and Storage 1SS397TE85LF

DIODE GEN PURP 400V 100MA SC70

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
1487

Product Details

Current - Reverse Leakage @ Vr
10µA @ 800V
Speed
Standard Recovery >500ns, > 200mA (Io)
Voltage - DC Reverse (Vr) (Max)
800V
Series
-
Current - Average Rectified (Io)
3A
Packaging
Tape & Reel (TR)
Operating Temperature - Junction
-55°C ~ 150°C
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
1.15V @ 2.5A
Part Status
Active
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Base Part Number
S3K
Capacitance @ Vr, F
60pF @ 4V, 1MHz
Supplier Device Package
DO-214AB (SMC)
Reverse Recovery Time (trr)
2.5µs