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Toshiba Semiconductor and Storage 1SS417,L3M
DIODE SCHOTTKY 40V 100MA FSC
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 13319
Product Details
- Supplier Device Package
- DFN1006-2L
- Reverse Recovery Time (trr)
- 5ns
- Current - Reverse Leakage @ Vr
- 2µA @ 25V
- Voltage - DC Reverse (Vr) (Max)
- 30V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Current - Average Rectified (Io)
- 200mA (DC)
- Series
- -
- Operating Temperature - Junction
- 125°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 100mA
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 0402 (1006 Metric)
- Capacitance @ Vr, F
- 10pF @ 1V, 1MHz