Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage CMF01(TE12L,Q,M)
DIODE GEN PURP 600V 2A MFLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.15
- Stock
- 100
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 850mV @ 5A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-201AD, Axial
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-201AD
- Current - Reverse Leakage @ Vr
- 100µA @ 90V
- Voltage - DC Reverse (Vr) (Max)
- 90V
- Current - Average Rectified (Io)
- 5A