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Toshiba Semiconductor and Storage CMF04(TE12L,Q,M)
DIODE GEN PURP 800V 500MA MFLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 6755
Product Details
- Packaging
- Cut Tape (CT)
- Operating Temperature - Junction
- 175°C (Max)
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 1A
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-204AL, DO-41, Axial
- Base Part Number
- STTH1L06
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-41
- Reverse Recovery Time (trr)
- 80ns
- Current - Reverse Leakage @ Vr
- 1µA @ 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Series
- -
- Current - Average Rectified (Io)
- 1A