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Toshiba Semiconductor and Storage CMG05(TE12L,Q,M)
DIODE GEN PURP 400V 1A M-FLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.1
- Stock
- 100
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 750mV @ 3A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-219AB
- Capacitance @ Vr, F
- -
- Supplier Device Package
- Sub SMA
- Current - Reverse Leakage @ Vr
- 500µA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Current - Average Rectified (Io)
- 3A