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Toshiba Semiconductor and Storage CMG06(TE12L,Q,M)
DIODE GEN PURP 600V 1A M-FLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.11
- Stock
- 100
Product Details
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SC-76, SOD-323
- Capacitance @ Vr, F
- 40pF @ 10V, 1MHz
- Supplier Device Package
- US-FLAT (1.25x2.5)
- Current - Reverse Leakage @ Vr
- 1mA @ 20V
- Voltage - DC Reverse (Vr) (Max)
- 20V
- Current - Average Rectified (Io)
- 1A
- Operating Temperature - Junction
- -40°C ~ 125°C
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If
- 370mV @ 700mA
- Series
- -
- Diode Type
- Schottky