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Toshiba Semiconductor and Storage CMH05A(TE12L,Q,M)
DIODE GEN PURP 400V 1A MFLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 400V 1A MFLAT
Product Details
- Capacitance @ Vr, F
- 900pF @ 4V, 1MHz
- Supplier Device Package
- DO-201AD
- Current - Reverse Leakage @ Vr
- 800µA @ 45V
- Voltage - DC Reverse (Vr) (Max)
- 45V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 9A
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 150°C
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 570mV @ 18A
- Diode Type
- Schottky
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- DO-201AD, Axial
- Base Part Number
- SD945