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Toshiba Semiconductor and Storage CMH08(TE12L,Q,M)

DIODE GEN PURP 400V 2A M-FLAT

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.26
Stock
100

Product Details

Voltage - DC Reverse (Vr) (Max)
60V
Current - Average Rectified (Io)
3A
Operating Temperature - Junction
-40°C ~ 150°C
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If
580mV @ 3A
Series
-
Diode Type
Schottky
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOD-128
Capacitance @ Vr, F
102pF @ 10V, 1MHz
Supplier Device Package
M-FLAT (2.4x3.8)
Current - Reverse Leakage @ Vr
300µA @ 60V