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Toshiba Semiconductor and Storage CMH08A(TE12L,Q,M)
DIODE GEN PURP 400V 2A MFLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 400V 2A MFLAT
Product Details
- Voltage - DC Reverse (Vr) (Max)
- 120V
- Current - Average Rectified (Io)
- 8A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -40°C ~ 150°C
- Series
- Automotive, AEC-Q101, eSMP®, TMBS®
- Voltage - Forward (Vf) (Max) @ If
- 840mV @ 8A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-277A (SMPC)
- Current - Reverse Leakage @ Vr
- 300µA @ 120V