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Toshiba Semiconductor and Storage CMH08A(TE12L,Q,M)

DIODE GEN PURP 400V 2A MFLAT

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
100

Product Details

Voltage - DC Reverse (Vr) (Max)
120V
Current - Average Rectified (Io)
8A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-40°C ~ 150°C
Series
Automotive, AEC-Q101, eSMP®, TMBS®
Voltage - Forward (Vf) (Max) @ If
840mV @ 8A
Packaging
Tape & Reel (TR)
Diode Type
Schottky
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-277, 3-PowerDFN
Capacitance @ Vr, F
-
Supplier Device Package
TO-277A (SMPC)
Current - Reverse Leakage @ Vr
300µA @ 120V