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Toshiba Semiconductor and Storage CRF02(TE85L,Q,M)

DIODE GEN PURP 800V 500MA S-FLAT

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.13
Stock
100

Product Details

Capacitance @ Vr, F
50pF @ 10V, 1MHz
Supplier Device Package
US-FLAT (1.25x2.5)
Current - Reverse Leakage @ Vr
60µA @ 30V
Voltage - DC Reverse (Vr) (Max)
30V
Current - Average Rectified (Io)
1.5A
Operating Temperature - Junction
150°C (Max)
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If
460mV @ 1.5A
Series
-
Diode Type
Schottky
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323