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Toshiba Semiconductor and Storage CRF03(TE85L,Q,M)

DIODE GEN PURP 600V 700MA SFLAT

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.1
Stock
100

Product Details

Current - Reverse Leakage @ Vr
100µA @ 20V
Voltage - DC Reverse (Vr) (Max)
20V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
500mA
Series
-
Operating Temperature - Junction
125°C (Max)
Packaging
Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If
470mV @ 500mA
Diode Type
Schottky
Part Status
Not For New Designs
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Base Part Number
RB551V-30
Capacitance @ Vr, F
-
Supplier Device Package
UMD2