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Toshiba Semiconductor and Storage CRG01(TE85L,Q,M)

DIODE GEN PURP 100V 700MA SFLAT

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.08
Stock
100

Product Details

Packaging
Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If
650mV @ 500mA
Diode Type
Schottky
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Capacitance @ Vr, F
14pF @ 10V, 1MHz
Supplier Device Package
Mini3-G3-B
Reverse Recovery Time (trr)
4.5ns
Current - Reverse Leakage @ Vr
100µA @ 50V
Voltage - DC Reverse (Vr) (Max)
60V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
500mA
Series
-
Operating Temperature - Junction
125°C (Max)