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Toshiba Semiconductor and Storage CRG01(TE85L,Q,M)
DIODE GEN PURP 100V 700MA SFLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.08
- Stock
- 100
Product Details
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 650mV @ 500mA
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Capacitance @ Vr, F
- 14pF @ 10V, 1MHz
- Supplier Device Package
- Mini3-G3-B
- Reverse Recovery Time (trr)
- 4.5ns
- Current - Reverse Leakage @ Vr
- 100µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 500mA
- Series
- -
- Operating Temperature - Junction
- 125°C (Max)