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Toshiba Semiconductor and Storage CRG05(TE85L,Q,M)

DIODE GEN PURP 800V 1A S-FLAT

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.1
Stock
100

Product Details

Package / Case
DO-214AA, SMB
Capacitance @ Vr, F
-
Supplier Device Package
DO-214AA (SMB)
Current - Reverse Leakage @ Vr
100µA @ 100V
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
1A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-55°C ~ 150°C
Series
Automotive, AEC-Q101
Voltage - Forward (Vf) (Max) @ If
850mV @ 1A
Packaging
Tape & Reel (TR)
Diode Type
Schottky
Part Status
Active
Mounting Type
Surface Mount