Images are for reference only. See Product Specifications for product details

Toshiba Semiconductor and Storage CRG09(TE85L,Q,M)

DIODE GEN PURP 400V 1A S-FLAT

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.09
Stock
100

Product Details

Series
-
Operating Temperature - Junction
-55°C ~ 150°C
Packaging
Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If
1.7V @ 2A
Diode Type
Standard
Part Status
Active
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Capacitance @ Vr, F
20pF @ 4V, 1MHz
Supplier Device Package
DO-204AC (DO-15)
Reverse Recovery Time (trr)
75ns
Current - Reverse Leakage @ Vr
5µA @ 800V
Voltage - DC Reverse (Vr) (Max)
800V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
2A