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Toshiba Semiconductor and Storage CRH01(TE85L,Q,M)
DIODE GEN PURP 200V 1A SFLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 117818
Product Details
- Capacitance @ Vr, F
- 40pF @ 10V, 1MHz
- Supplier Device Package
- TMiniP2-F2-B
- Reverse Recovery Time (trr)
- 12ns
- Current - Reverse Leakage @ Vr
- 350µA @ 60V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Series
- -
- Current - Average Rectified (Io)
- 3A (DC)
- Packaging
- Digi-Reel®
- Operating Temperature - Junction
- 150°C (Max)
- Diode Type
- Schottky
- Voltage - Forward (Vf) (Max) @ If
- 700mV @ 3A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SOD-128
- Base Part Number
- DB24606